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STPS40L15CW
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAJOR PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 2 x 20 A 15 V 150C 0.33 V
A1 K A2
FEATURES AND BENEFITS VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK SIZE REVERSE VOLTAGE SUITED TO OR-ing OF 3V, 5V and 12V RAILS DESCRIPTION Dual center tap schottky rectifier packaged in TO-247, this device is especially intended for use as OR-ing diode in fault tolerant power supply equipments.
A2 K A1
TO-247
ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Peak repetitive reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tcase = 140C =1 Total Per diode Value 15 30 40 20 310 2 3 - 65 to + 150 150 10000 A A A C C V/s Unit V A A
tp = 10 ms Sinusoidal tp = 2 s F = 1kHz tp = 100 s
dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj
August 1999 - Ed: 4A
1/4
STPS40L15CW
THERMAL RESISTANCES Symbol Rth(j-c) Rth (c) Junction to case Parameter Per diode Total Coupling Value 1.6 0.85 0.1 Unit C/W C/W
STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 100C Tj = 25C Tj = 25C Tj = 125C Tj = 125C Pulse test : * tp = 380 s, < 2% To evaluate the conduction losses use the following equation : P = 0.18 x IF(AV) + 0.008 IF2(RMS) IF = 19 A IF = 40 A IF = 19 A IF = 40 A 0.28 0.42 VR = VRRM 200 Min. Typ. Max. 6 500 0.41 0.52 0.33 0.50 V Unit mA
VF *
Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W)
= 0.1 = 0.05 = 0.2 = 0.5 =1
Fig. 2: Average forward current versus ambient temperature (=1, per diode).
IF(av)(A) 22 20 18 16 14 12 10 8 6 4 2 0
Rth(j-a)=Rth(j-c)
8 7 6 5 4 3 2 1 0
Rth(j-a)=15C/W
T
T
IF(av) (A) 0 2 4 6 8 10 12 14 16
=tp/T
tp
=tp/T
tp
Tamb(C) 50 75 100 125 150
18
20
22
0
25
2/4
STPS40L15CW
Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values per diode).
IM(A) 250 200 150
Tc=50C
Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c) 1.0 0.8 0.6
Tc=75C
= 0.5
100
IM
0.4 0.2
= 0.2 = 0.1
T
50 0 1E-3
Tc=110C
t
=0.5
t(s)
Single pulse
tp (s)
1E-1 1E+0
=tp/T
tp
1E-2
0.0 1.0E-4
1.0E-3
1.0E-2
1.0E-1
1.0E+0
Fig. 5: Reverse leakage current versus reverse voltage applied (typical values per diode).
IR(mA)
Fig. 6: Junction capacitance versus reverse voltage applied (typical values per diode).
C(nF) 5.0
5E+2 1E+2
Tj=100C
F=1MHz Tj=25C
1E+1
1.0
1E+0
Tj=25C
1E-1
VR(V) 0 2 4 6 8 10 12 14 16
VR(V) 0.1 1 2 5 10 20
Fig. 7: Forward voltage drop versus forward current (typical values per diode).
Fig. 8: Forward voltage drop versus forward current (typical maximum per diode).
IFM(A) 200.0 100.0
Tj=150C
200 100
Tj=25C Tj=125C Tj=75C
IFM(A)
Tj=100C
10.0
10
1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1
VFM(V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
3/4
STPS40L15CW
PACKAGE MECHANICAL DATA TO-247 DIMENSIONS
V
REF.
Millimeters
Inches 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5 60 0.143
Min. Typ. Max. Min. Typ. Max.
V Dia.
H
A
L5
L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3
F1
L1 D
A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5 V2 60 Dia. 3.55 3.65 0.139
Ordering type
Marking
Package TO-247
Weight 4.4 g.
Base qty 30
Delivery mode Tube
STPS40L15CW STPS40L15CW
Cooling method : by conduction (C) Recommended torque value : 0.8 N.m. Maximum torque value : 1.0 N.m. Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4


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